Modern DRAM chips (DDR4 and LPDDR4 after 2015) are affected by a vulnerability in deployment of internal mitigations against RowHammer attacks known as Target Row Refresh (TRR), aka the TRRespass issue. To exploit this vulnerability, the attacker needs to create certain access patterns to trigger bit flips on affected memory modules, aka a Many-sided RowHammer attack. This means that, even when chips advertised as RowHammer-free are used, attackers may still be able to conduct privilege-escalation attacks against the kernel, conduct privilege-escalation attacks against the Sudo binary, and achieve cross-tenant virtual-machine access by corrupting RSA keys. The issue affects chips produced by SK Hynix, Micron, and Samsung. NOTE: tracking DRAM supply-chain issues is not straightforward because a single product model from a single vendor may use DRAM chips from different manufacturers.
Published 2020-03-10 16:15:16
Updated 2020-03-16 15:23:07
Source MITRE
View at NVD,   CVE.org
Vulnerability category: Input validationGain privilege

Exploit prediction scoring system (EPSS) score for CVE-2020-10255

0.22%
Probability of exploitation activity in the next 30 days EPSS Score History
~ 59 %
Percentile, the proportion of vulnerabilities that are scored at or less

CVSS scores for CVE-2020-10255

Base Score Base Severity CVSS Vector Exploitability Score Impact Score Score Source First Seen
9.3
HIGH AV:N/AC:M/Au:N/C:C/I:C/A:C
8.6
10.0
NIST
9.0
CRITICAL CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H
2.2
6.0
NIST

CWE ids for CVE-2020-10255

  • The product receives input or data, but it does not validate or incorrectly validates that the input has the properties that are required to process the data safely and correctly.
    Assigned by: nvd@nist.gov (Primary)

References for CVE-2020-10255

Products affected by CVE-2020-10255

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