In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.
Published 2018-09-20 13:29:02
Updated 2018-11-23 18:07:38
View at NVD,   CVE.org
Vulnerability category: Memory Corruption

Products affected by CVE-2018-11982

Exploit prediction scoring system (EPSS) score for CVE-2018-11982

0.07%
Probability of exploitation activity in the next 30 days EPSS Score History
~ 29 %
Percentile, the proportion of vulnerabilities that are scored at or less

CVSS scores for CVE-2018-11982

Base Score Base Severity CVSS Vector Exploitability Score Impact Score Score Source First Seen
8.3
HIGH AV:A/AC:L/Au:N/C:C/I:C/A:C
6.5
10.0
NIST
8.8
HIGH CVSS:3.0/AV:A/AC:L/PR:N/UI:N/S:U/C:H/I:H/A:H
2.8
5.9
NIST

CWE ids for CVE-2018-11982

  • The product calls free() twice on the same memory address, potentially leading to modification of unexpected memory locations.
    Assigned by: nvd@nist.gov (Primary)

References for CVE-2018-11982

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